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Transient analysis of charge transport in the nitride of MNOS devices under Fowler-Nordheim injection conditionsMARTIN, F; AYMERICH, X.Microelectronics journal. 1991, Vol 22, Num 7-8, pp 5-17, issn 0959-8324Article

New insights on the Post-BD conduction of MOS devices at the nanoscalePORTI, M; MELI, S; NAFRIA, M et al.IEEE electron device letters. 2005, Vol 26, Num 2, pp 109-111, issn 0741-3106, 3 p.Article

On the dissipation of energy by hot electron in SiO2PLACENCIA, I; MARTIN, F; SUNE, J et al.Journal of physics. D, Applied physics (Print). 1990, Vol 23, Num 12, pp 1576-1581, issn 0022-3727, 6 p.Article

DC broken down MOSFET model for circuit reliability simulationFERNANDEZ, R; RODRIGUEZ, R; NAFRIA, M et al.Electronics Letters. 2005, Vol 41, Num 6, pp 368-370, issn 0013-5194, 3 p.Article

Modification of HF-treated silicon (100) surfaces by scanning tunneling microscopy in air under imaging conditionsVARNIOL, N; PEREZ-MURANO, F; AYMERICH, X et al.Applied physics letters. 1992, Vol 61, Num 4, pp 462-464, issn 0003-6951Article

Breakdown on thin gate silicon dioxide films : A reviewNAFRIA, M; SUNE, J; AYMERICH, X et al.Microelectronics and reliability. 1996, Vol 36, Num 7-8, pp 871-905, issn 0026-2714Article

Exploratory observations of post-breakdown conduction in polycrystalline-silicon and metal-gated thin-oxide metal-oxide-semiconductor capacitorsNAFRIA, M; SUNE, J; AYMERICH, X et al.Journal of applied physics. 1993, Vol 73, Num 1, pp 205-215, issn 0021-8979Article

Characterization of SiO2 dielectric breakdown for reliability simulationNAFRIA, M; SUNE, J; AYMERICH, X et al.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 9, pp 1662-1668, issn 0018-9383Article

Contributions of the gate current and channel current variation to the post-breakdown MOSFET performanceFERNANDEZ, R; RODRIGUEZ, R; NAFRIA, M et al.Microelectronic engineering. 2008, Vol 85, Num 2, pp 259-262, issn 0167-9317, 4 p.Article

Charge trapping and degradation of HfO2/SiO2 MOS gate stacks observed with enhanced CAFMAGUILERA, L; PORTI, M; NAFRIA, M et al.IEEE electron device letters. 2006, Vol 27, Num 3, pp 157-159, issn 0741-3106, 3 p.Article

The statistical distribution of breakdown from multiple breakdown events in one sampleFARRES, E; NAFRIA; SUNE, J et al.Journal of physics. D, Applied physics (Print). 1991, Vol 24, Num 3, pp 407-414, issn 0022-3727, 8 p.Article

Nanoscale post-breakdown conduction of HfO2/SiO2MOS gate stacks studied by enhanced-cafmBLASCO, X; NAFRIA, M; AYMERICH, X et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 12, pp 2817-2819, issn 0018-9383, 3 p.Article

Simple STM theoryBARNIOL, N; FARRES, E; MARTIN, F et al.Vacuum. 1990, Vol 41, Num 1-3, pp 379-381, issn 0042-207X, 3 p.Conference Paper

On the Si-SiO2 interface roughness in VLSI-MOS structuresSUNE, J; PLACENCIA, I; FARRES, E et al.Physica status solidi. A. Applied research. 1988, Vol 109, Num 2, pp 479-491, issn 0031-8965Article

Si-SiO2 interfacial atomic scale roughness caused by inhomogeneous thermal oxidationFARRES, E; SUNE, J; PLACENCIA, I et al.Physica status solidi. A. Applied research. 1989, Vol 113, Num 1, pp 83-96, issn 0031-8965Article

The thermal growth of very thin SiO2 films: a diffusion-controlled processFARRES, E; SUNE, J; PLACENCIA, I et al.Physica status solidi. A. Applied research. 1989, Vol 114, Num 1, pp 167-175, issn 0031-8965, 9 p.Article

Degradation and breakdown of gate oxides in VLSI devicesSUNE, J; PLACENCIA, I; BARNIOL, N et al.Physica status solidi. A. Applied research. 1989, Vol 111, Num 2, pp 675-685, issn 0031-8965Article

Morphologic and spectroscopic characterization of porous Pt/GaAs Schottky diodes by scanning tunnelling microscopyMASO, J; BARNIOL, N; PEREZ-MURANO, F et al.Thin solid films. 1995, Vol 261, Num 1-2, pp 299-306, issn 0040-6090Article

Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscaleLANZA, M; PORTI, M; NAFRIA, M et al.Microelectronics and reliability. 2009, Vol 49, Num 9-11, pp 1188-1191, issn 0026-2714, 4 p.Conference Paper

Analysis of the degradation of HfO2/SiO2 gate stacks using nanoscale and device level techniquesAGUILERA, L; AMAT, E; RODRIGUEZ, R et al.Microelectronic engineering. 2007, Vol 84, Num 5-8, pp 1618-1621, issn 0167-9317, 4 p.Conference Paper

Irradiation induced weak spots in SiO2 gate oxides of MOS devices observed with C-AFMPORTI, M; NAFRIA, M; AYMERICH, X et al.Electronics Letters. 2005, Vol 41, Num 2, pp 101-103, issn 0013-5194, 3 p.Article

Feasibility of the electrical characterization of single SiO2 breakdown spots using C-AFMPORTI, M; RODRIGUEZ, R; NAFRIA, M et al.Journal of non-crystalline solids. 2001, Vol 280, Num 1-3, pp 138-142, issn 0022-3093Conference Paper

Two-step stress method for the dynamic testing of very thin (8 nm) SiO2 filmsRODRIGUEZ, R; MIRANDA, E; NAFRIA, M et al.Microelectronics and reliability. 1998, Vol 38, Num 6-8, pp 1127-1131, issn 0026-2714Conference Paper

A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectricsAMAT, E; KAUERAUF, T; RODRIGUEZ, R et al.Microelectronic engineering. 2013, Vol 103, pp 144-149, issn 0167-9317, 6 p.Article

Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETsVELAYUDHAN, V; GAMIZ, F; MARTIN-MARTINEZ, J et al.Microelectronics and reliability. 2013, Vol 53, Num 9-11, pp 1243-1246, issn 0026-2714, 4 p.Conference Paper

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